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Title: Ga lithography in sputtered niobium for superconductive micro and nanowires

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 μm by 10 μm and 100 μm by 100 μm, demonstrate that doses above than 7.5 × 10{sup 15 }cm{sup −2} at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 μm long connected to 50 μm wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c}) = 7.7 K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.
Authors:
; ; ;  [1]
  1. Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)
Publication Date:
OSTI Identifier:
22310898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; FILMS; GALLIUM; ION BEAMS; LAYERS; MAGNETIC PROPERTIES; MICROSTRUCTURE; NANOSTRUCTURES; NANOWIRES; NIOBIUM; NIOBIUM COMPOUNDS; NIOBIUM NITRIDES; NITROGEN COMPOUNDS; QUANTUM WIRES; SILICON COMPOUNDS; SPUTTERING; SUPERCONDUCTIVITY; TEMPERATURE RANGE 0000-0013 K; TITANIUM COMPOUNDS; TITANIUM NITRIDES; TRANSITION TEMPERATURE