Spin-torque diode radio-frequency detector with voltage tuned resonance

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893463· OSTI ID:22310892

Skowroński, Witold; Frankowski, Marek; Stobiecki, Tomasz ^[1]; Wrona, Jerzy ^[1]; Ogrodnik, Piotr ^[2]; Barnaś, Józef ^[3]

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1. AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland)
2. Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland)
3. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)

We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

• OSTI ID: 22310892
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ELECTRIC POTENTIAL
EQUIPMENT
INTERFACES
LAYERS
MAGNETIC PROPERTIES
OSCILLATIONS
RADIATION DETECTORS
RADIOWAVE RADIATION
RESONANCE
SPIN
TORQUE
TUNNEL EFFECT