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Title: Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ; ; ;  [1] ; ; ;  [5] ;  [6]
  1. Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland)
  2. (Ukraine)
  3. MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)
  4. (Poland)
  5. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  6. Analytical Laboratory, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Skłodowskiej 3, 20-031 Lublin (Poland)
Publication Date:
OSTI Identifier:
22310888
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIC COMPOUNDS; BISMUTH COMPOUNDS; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; FERROMAGNETISM; GALLIUM COMPOUNDS; HOLES; LAYERS; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MODULATION; MOLECULAR BEAM EPITAXY; SPECTROSCOPY; TERNARY ALLOY SYSTEMS; VALENCE