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Title: Growth and characterization of dilute nitride GaN{sub x}P{sub 1−x} nanowires and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires on Si (111) by gas source molecular beam epitaxy

We have demonstrated self-catalyzed GaN{sub x}P{sub 1−x} and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN{sub x}P{sub 1−x} nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaN{sub x}P{sub 1−x} nanowires. A temperature-dependent photoluminescence (PL) study performed on GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaN{sub x}P{sub 1−x} core.
Authors:
 [1] ;  [2] ; ; ;  [3] ; ;  [4] ;  [5] ;  [1] ;  [6]
  1. Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
  2. Department of Physics, University of California, San Diego, La Jolla, California 92037 (United States)
  3. Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)
  4. Department of Materials Science and Engineering, Gwangju institute of Science and Technology (GIST), Gwangju 500-712 (Korea, Republic of)
  5. Department of Electronic Engineering, LED-IT Fusion Technology Research Center, Yeungnam University, Daegu 712-749 (Korea, Republic of)
  6. (United States)
Publication Date:
OSTI Identifier:
22310886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WIRES; RECOMBINATION; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDES