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Title: High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
  2. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22310885
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FILMS; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; PHOTODETECTORS; PHOTOLUMINESCENCE; P-N JUNCTIONS; SUBSTRATES; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION; ZINC OXIDES