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Title: Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22310880
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CRYSTAL GROWTH; DOPED MATERIALS; DROPLETS; ELEVATORS; EXTRACTION; GALLIUM NITRIDES; GARNETS; INDIUM COMPOUNDS; LASER RADIATION; LIGHT EMITTING DIODES; PYROLYSIS; SUBSTRATES; ULTRAVIOLET RADIATION; VISIBLE RADIATION