Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893757· OSTI ID:22310880

Iida, Daisuke; Kawai, Syunsuke; Ema, Nobuaki; Tsuchiya, Takayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi ^[1]; Akasaki, Isamu ^[1]

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1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502 (Japan)

We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate.

• OSTI ID: 22310880
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CRYSTAL GROWTH
DOPED MATERIALS
DROPLETS
ELEVATORS
EXTRACTION
GALLIUM NITRIDES
GARNETS
INDIUM COMPOUNDS
LASER RADIATION
LIGHT EMITTING DIODES
PYROLYSIS
SUBSTRATES
ULTRAVIOLET RADIATION
VISIBLE RADIATION