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Title: Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces

We study high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x} Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1−x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.
Authors:
 [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan)
  2. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22310866
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ATOMS; COBALT COMPOUNDS; DIFFUSION; HEAT TREATMENTS; HEUSLER ALLOYS; IRON COMPOUNDS; MAGNETIC PROPERTIES; SILICON; SILICON COMPOUNDS; SPIN; STABILITY; TRANSISTORS