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Title: Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.
Authors:
;  [1] ; ; ; ;  [1] ;  [2]
  1. NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22310845
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; DIFFUSION; EVOLUTION; GALLIUM ARSENIDES; INDIUM COMPOUNDS; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM DOTS; STACKS; STRAINS