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Title: Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.
Authors:
; ; ; ;  [1]
  1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Publication Date:
OSTI Identifier:
22310843
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GALLIUM NITRIDES; INTERFACES; LAYERS; METALS; MIS TRANSISTORS; ORGANOMETALLIC COMPOUNDS; PASSIVATION; SEMICONDUCTOR MATERIALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY