skip to main content

Title: X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al{sub 2}O{sub 3}/InGaAs stacks

In this work, the post-breakdown characteristics of metal gate/Al{sub 2}O{sub 3}/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al{sub 2}O{sub 3}/InGaAs and SiO{sub 2}/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
  2. Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
  3. (Israel)
Publication Date:
OSTI Identifier:
22310841
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BREAKDOWN; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM COMPOUNDS; INTERFACES; METALS; MICROSTRUCTURE; MOS TRANSISTORS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SUBSTRATES; SURFACES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY