X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al{sub 2}O{sub 3}/InGaAs stacks

Journal Article · Mon Sep 08 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4895627· OSTI ID:22310841

Shekhter, P.; Palumbo, F. ^[1]; Cohen Weinfeld, K. ^[2]; Eizenberg, M. ^[1]

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1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
2. Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa (Israel)

In this work, the post-breakdown characteristics of metal gate/Al{sub 2}O{sub 3}/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al{sub 2}O{sub 3}/InGaAs and SiO{sub 2}/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

• OSTI ID: 22310841
• Journal Information: Applied Physics Letters, Vol. 105, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BREAKDOWN
DIELECTRIC MATERIALS
DIFFUSION
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
METALS
MICROSTRUCTURE
MOS TRANSISTORS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
SURFACES
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY