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Title: Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect

Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe]{sub 3}/MgO and [Pt/Fe]{sub 3}/SiO{sub 2} multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO{sub 2} interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R{sub xy}) was greatly increased in the [Pt/Fe]{sub 3}/MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R{sub xy} of the [Pt/Fe]{sub 3}/SiO{sub 2} multilayer only increased 10% after annealing.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
  2. Analytical and Testing Center, Beijing Normal University, Beijing 100875 (China)
Publication Date:
OSTI Identifier:
22310831
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; FILMS; HALL EFFECT; INTERFACES; IRON; LAYERS; MAGNESIUM OXIDES; PLATINUM; SATURATION; SILICA; SILICON OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY