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Title: Distribution of the surface potential of epitaxial HgCdTe

We studied the distribution of surface potential of the Hg{sub 1−x}Cd{sub x}Te epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of the spatial distribution of surface potential in the region of the V-defect can be related to the variation of the material composition of epitaxial film. The V-defect is characterized by increased of Hg content with respect to the composition of the solid solution of Hg{sub 1−x}Cd{sub x}Te epitaxial film. In this paper, it was demonstrated that the unformed V-defects can be observed together with the macroscopic V-defects on the epitaxial film surface. These unformed V-defects can allow the creation of a complex surface potential distribution profile due to the redistribution of the solid solution composition.
Authors:
; ;  [1] ;  [2]
  1. Tomsk State University, 634050, 36, Lenina Avenue, Tomsk (Russian Federation)
  2. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, 13, pr. Lavrentieva, Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22310829
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM COMPOUNDS; CRYSTAL DEFECTS; FILMS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SOLID SOLUTIONS; SPATIAL DISTRIBUTION; SURFACE POTENTIAL; SURFACES; TELLURIUM COMPOUNDS