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Title: Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24 eV), D3 (E{sub C}–0.60 eV), D4 (E{sub C}–0.69 eV), D5 (E{sub C}–0.96 eV), D7 (E{sub C}–1.19 eV), and D8, were observed. After 2 MeV electron irradiation at a fluence of 1 × 10{sup 14 }cm{sup −2}, three deep electron traps, labeled D1 (E{sub C}–0.12 eV), D5I (E{sub C}–0.89 eV), and D6 (E{sub C}–1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden)
  2. Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)
Publication Date:
OSTI Identifier:
22310828
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; EV RANGE; GALLIUM NITRIDES; LAYERS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; TRAPS; VACANCIES; VAPOR PHASE EPITAXY