Anomalous junctions characterized by Raman spectroscopy in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components

Journal Article · Mon Sep 08 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4895515· OSTI ID:22310824

Xia, Minggang ^[1]; Han, Jinyun; Cheng, Zhaofang; Liang, Chunping; Zhang, Shengli ^[1]

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1. Laboratory of Nanostructure and Physics Properties, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 (China)

The characterization of junctions in nanowires by high-resolution transmission electron microscopy with spherical aberration correction is tricky and tedious. Many disadvantages also exist, including rigorous sample preparation and structural damage inflicted by high-energy electrons. In this work, we present a simple, low-cost, and non-destructive Raman spectroscopy method of characterizing anomalous junctions in nanowires with axially degraded components. The Raman spectra of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are studied in detail using a confocal micro-Raman spectrometer. Three Raman peaks (ν{sub Si–Si} = 490 cm{sup −1}, ν{sub Si–Ge} = 400 cm{sup −1}, and ν{sub Ge–Ge} = 284 cm{sup −1}) up-shift with increased Si content. This up-shift originates in the bond compression induced by a confined effect on the radial direction of nanowire. The anomalous junctions in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are then observed by Raman spectroscopy and verified by transmission electron microscopy energy-dispersive X-ray spectroscopy. The anomalous junctions of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are due to the vortex flow of inlet SiH{sub 4} and GeH{sub 4} gas in their synthesis. The anomalous junctions can be used as raw materials for fabricating devices with special functions.

• OSTI ID: 22310824
• Journal Information: Applied Physics Letters, Vol. 105, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPRESSION
DAMAGE
ELECTRIC CONTACTS
ELECTRONS
GERMANIUM COMPOUNDS
GERMANIUM HYDRIDES
NANOWIRES
QUANTUM WIRES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RESOLUTION
SEMICONDUCTOR JUNCTIONS
SILANES
SILICON COMPOUNDS
SPECTROMETERS
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
VORTEX FLOW
X-RAY SPECTROSCOPY