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Title: Band alignment study of lattice-matched In{sub 0.49}Ga{sub 0.51}P and Ge using x-ray photoelectron spectroscopy

Lattice-matched In{sub 0.49}Ga{sub 0.51}P was grown on a p-type Ge(100) substrate with a 10° off-cut towards the (111) by low temperature molecular beam epitaxy, and the band-alignment of In{sub 0.49}Ga{sub 0.51}P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InGaP/Ge(100) interface was found to be 0.64 ± 0.12 eV, with a corresponding conduction band offset of 0.60 ± 0.12 eV. The InGaP/Ge interface is found to be of the type I band alignment.
Authors:
; ; ;  [1] ; ;  [2] ; ; ;  [3] ;  [4]
  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore)
  2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
  3. School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore)
  4. Department of Physics, National University of Singapore, Singapore 117551 (Singapore)
Publication Date:
OSTI Identifier:
22310822
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EV RANGE; GALLIUM COMPOUNDS; GERMANIUM; INDIUM COMPOUNDS; INTERFACES; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; P-TYPE CONDUCTORS; RESOLUTION; SUBSTRATES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY