Band alignment study of lattice-matched In{sub 0.49}Ga{sub 0.51}P and Ge using x-ray photoelectron spectroscopy
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore)
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
- School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore)
- Department of Physics, National University of Singapore, Singapore 117551 (Singapore)
Lattice-matched In{sub 0.49}Ga{sub 0.51}P was grown on a p-type Ge(100) substrate with a 10° off-cut towards the (111) by low temperature molecular beam epitaxy, and the band-alignment of In{sub 0.49}Ga{sub 0.51}P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InGaP/Ge(100) interface was found to be 0.64 ± 0.12 eV, with a corresponding conduction band offset of 0.60 ± 0.12 eV. The InGaP/Ge interface is found to be of the type I band alignment.
- OSTI ID:
- 22310822
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Compositional dependence of the luminescence of In{sub 0.49}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.51}P alloys near the direct{endash}indirect band-gap crossover
Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells
Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers
Journal Article
·
Sat Jun 01 00:00:00 EDT 1996
· Physical Review, B: Condensed Matter
·
OSTI ID:22310822
+7 more
Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells
Book
·
Wed Dec 31 00:00:00 EST 1997
·
OSTI ID:22310822
+1 more
Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers
Journal Article
·
Mon Mar 28 00:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:22310822
+9 more