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Title: Large piezoresistive effect in surface conductive nanocrystalline diamond

Surface conductivity in hydrogen-terminated single crystal diamond is an intriguing phenomenon for fundamental reasons as well as for application driven research. Surface conductivity is also observed in hydrogen-terminated nanocrystalline diamond although the electronic transport mechanisms remain unclear. In this work, the piezoresistive properties of intrinsic surface conductive nanocrystalline diamond are investigated. A gauge factor of 35 is calculated from bulging a diamond membrane of 350 nm thick, with a diameter of 656 μm and a sheet resistance of 1.45 MΩ/sq. The large piezoresistive effect is reasoned to originate directly from strain-induced changes in the resistivity of the grain boundaries. Additionally, we ascribe a small time-dependent fraction of the piezoresistive effect to charge trapping of charge carriers at grain boundaries. In conclusion, time-dependent piezoresistive effect measurements act as a tool for deeper understanding the complex electronic transport mechanisms induced by grain boundaries in a polycrystalline material or nanocomposite.
Authors:
;  [1] ;  [2] ;  [1]
  1. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22310819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN; MONOCRYSTALS; NANOSTRUCTURES; PIEZOELECTRICITY; POLYCRYSTALS; SURFACES; TIME DEPENDENCE; TRAPPING