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Title: Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO{sub 3}

Oxygen vacancies at the metal/oxide interface, driven by an electric field, have been considered responsible for the switching to the low-resistance state. We studied the electrical properties, along with microscopic observations, of the Pt/Nb-doped SrTiO{sub 3} (001) single-crystal system. Electron energy loss spectroscopy revealed highly accumulated oxygen vacancies at the interface in the high-resistance state, contrasting to common explanation. Higher resistance state by more oxygen vacancies was further confirmed in Pt/H{sub 2}-annealed SrTiO{sub 3}. These results suggest the presence of an interfacial state which dominantly determined the resistivity by changing the barrier height at the interface.
Authors:
; ; ;  [1] ;  [2]
  1. Research Institute of Advanced Materials, Department of Material Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)
  2. Department of Physics, Hankuk University of Foreign Studies, Yongin, Kyungki 449-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ENERGY-LOSS SPECTROSCOPY; INTERFACES; METALS; MONOCRYSTALS; NIOBIUM ADDITIONS; OXIDES; OXYGEN; PLATINUM; STRONTIUM TITANATES; SWITCHING DIODES; VACANCIES