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Title: Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

We report the observation, through Shubnikov-de Haas oscillations in the magnetoresistance, of spin splitting caused by the Rashba spin-orbit interaction in a strained Ge quantum well epitaxially grown on a standard Si(001) substrate. The Shubnikov-de Haas oscillations display a beating pattern due to the spin split Landau levels. The spin-orbit parameter and Rashba spin-splitting energy are found to be 1.0 × 10{sup −28 } eVm{sup 3} and 1.4 meV, respectively. This energy is comparable to 2D electron gases in III-V semiconductors, but substantially larger than in Si, and illustrates the suitability of Ge for modulated hole spin transport devices.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
  2. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)
Publication Date:
OSTI Identifier:
22310704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON GAS; EPITAXY; EQUIPMENT; GERMANIUM; HOLES; L-S COUPLING; MAGNETORESISTANCE; OSCILLATIONS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SHUBNIKOV-DE HAAS EFFECT; SILICON; SPIN; STRAINS; SUBSTRATES