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Title: III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States)
  2. Corning Incorporated, Corning, New York 14831 (United States)
Publication Date:
OSTI Identifier:
22310703
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; TEMPERATURE RANGE 0065-0273 K