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Title: Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1‚ÄČeV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.
Authors:
; ;  [1]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22310702
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRONS; EV RANGE; FERMI LEVEL; NICKEL OXIDES; OPTICAL EQUIPMENT; PHOTOVOLTAIC EFFECT; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON; VALENCE