Realizing in-plane surface diffraction by x-ray multiple-beam diffraction with large incidence angle
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
- National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Based on rigorous dynamical-theory calculations, we demonstrate the principle of an x-ray multiple-beam diffraction (MBD) scheme that overcomes the long-lasting difficulties of high-resolution in-plane diffraction from crystal surfaces. This scheme only utilizes symmetric reflection geometry with large incident angles but activates the out-of-plane and in-plane diffraction processes simultaneously and separately in the continuous MBD planes. The in-plane diffraction is realized by detoured MBD, where the intermediate diffracted waves propagate parallel to the surface, which corresponds to an absolute Bragg surface diffraction configuration that is extremely sensitive to surface structures. A series of MBD diffraction and imaging techniques may be developed from this principle to study surface/interface (misfit) strains, lateral nanostructures, and phase transitions of a wide range of (pseudo)cubic crystal structures, including ultrathin epitaxial films and multilayers, quantum dots, strain-engineered semiconductor or (multi)ferroic materials, etc.
- OSTI ID:
- 22310701
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Assessment of phase transition and thermal expansion coefficients by means of secondary multiple reflections of Renninger scans
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journal | October 2019 |
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
CONFIGURATION
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
EPITAXY
FILMS
INCIDENCE ANGLE
INTERFACES
LAYERS
PHASE TRANSFORMATIONS
QUANTUM DOTS
REFLECTION
RESOLUTION
SEMICONDUCTOR MATERIALS
STRAINS
SURFACES
SYMMETRY
X RADIATION
X-RAY DIFFRACTION