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Title: Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

We report on green (550–560 nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (∼500 A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.
Authors:
;  [1] ; ;  [2] ; ; ; ;  [3] ; ; ;  [4]
  1. VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany)
  2. Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland)
  3. A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)
  4. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)
Publication Date:
OSTI Identifier:
22310700
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CLADDING; CURRENT DENSITY; DOPED MATERIALS; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; SATURATION; SPECTRA; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS