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Title: Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.
Authors:
;  [1] ; ;  [2] ; ;  [3] ;  [4]
  1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)
  2. School of Integrated Technology and Yonsei Institute of Convergence Technology, Yonsei University, Yeonsu-gu, Incheon 406-840 (Korea, Republic of)
  3. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  4. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
Publication Date:
OSTI Identifier:
22310698
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CARRIER MOBILITY; CURRENTS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON BEAMS; EPITAXY; FERMI LEVEL; GRAPHENE; IRRADIATION; LAYERS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES; STRAINS; SUBSTRATES; SURFACES; TAIL ELECTRONS