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Title: Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ; ;  [1] ;  [2] ;  [2]
  1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China)
  2. (China)
Publication Date:
OSTI Identifier:
22310685
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DISTRIBUTION; EFFICIENCY; ELECTRIC POTENTIAL; GALLIUM NITRIDES; HOLE MOBILITY; HOLES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; POWER TRANSMISSION; QUANTUM WELLS; THICKNESS; WAVELENGTHS