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Title: Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140–220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
Publication Date:
OSTI Identifier:
22310683
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EQUIPMENT; EQUIVALENT CIRCUITS; FORECASTING; GALLIUM NITRIDES; GHZ RANGE; INDUCTANCE; PERIODICITY; PLASMA WAVES; TRANSISTORS; TWO-DIMENSIONAL CALCULATIONS