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Title: Filament formation and erasure in molybdenum oxide during resistive switching cycles

In-situ filament observations were carried out on the Cu/MoO{sub x}/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.
Authors:
; ; ;  [1]
  1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060–0814 (Japan)
Publication Date:
OSTI Identifier:
22310679
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER; CURRENTS; ELECTRIC CONDUCTIVITY; FILAMENTS; MEMORY DEVICES; MOLYBDENUM OXIDES; SWITCHES; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY