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Title: Critical boron-doping levels for generation of dislocations in synthetic diamond

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
Authors:
; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)
  2. Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France)
  3. GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)
Publication Date:
OSTI Identifier:
22310670
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON ADDITIONS; BURGERS VECTOR; CONCENTRATION RATIO; CRYSTAL DEFECTS; DIAMONDS; DISLOCATIONS; LAYERS; STRAINS; TRANSMISSION ELECTRON MICROSCOPY