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Title: Defect states and charge trapping characteristics of HfO{sub 2} films for high performance nonvolatile memory applications

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO{sub 2}-Si (MHOS) structure. The devices based on 800 °C annealed HfO{sub 2} film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10{sup 4 }s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO{sub 2} films. We investigated the defect states in the HfO{sub 2} films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO{sub 2} based MHOS devices.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)
  2. Laboratory of Solid State Microstructures and Innovation Center for Advanced Microstructure, Nanjing University, Nanjing 210093 (China)
  3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China)
Publication Date:
OSTI Identifier:
22310666
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; ENERGY LEVELS; EV RANGE; EXCITATION; FILMS; HAFNIUM OXIDES; MEMORY DEVICES; METALS; PHOTOLUMINESCENCE; SILICON OXIDES; TRAPPING