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Title: Strain-modulation of spin-dependent transport in graphene

We investigate strain modulation of the spin-dependent electron transport in a graphene junction using the transfer matrix method. As an analogy to optics, we define the modulation depth in the electron optics domain. Additionally, we discuss the transport properties and show that the modulation depth and the conductance depend on the spin-orbit coupling strength, the strain magnitude, the width of the strained area, and the energy of the incident electron. The conductances of the spin-down and spin-up electrons have opposite and symmetrical variations, which results in the analogous features of their modulation depths. The maximum conditions for both the modulation depth and the electron spin upset rate are also analyzed.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. College of Electronics and Information, South-Central University for Nationalities, Wuhan 430074 (China)
  2. Faculty of Science, Shaanxi University of Science and Technology, Xian 710021 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22310661
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONTACTS; GRAPHENE; L-S COUPLING; MODULATION; OPTICS; SEMICONDUCTOR JUNCTIONS; SPIN; STRAINS; TRANSFER MATRIX METHOD