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Title: Size-tunable strain engineering in Ge nanocrystals embedded within SiO{sub 2} and Si{sub 3}N{sub 4}

We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO{sub 2} and Si{sub 3}N{sub 4} layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si{sub 3}N{sub 4} or a SiO{sub 2} layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured GrĂ¼nesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Electrical Engineering and Center for Nano Science and Technology, National Central University, ChungLi 32001, Taiwan (China)
  2. Department of Physics, National Central University, ChungLi 32001, Taiwan (China)
  3. Private Consultancy, Arcadia, California 91007 (United States)
Publication Date:
OSTI Identifier:
22310656
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CUBIC LATTICES; DIAMONDS; ELECTRON DIFFRACTION; GERMANIUM; LAYERS; METALS; NANOPARTICLES; QUANTUM DOTS; RAMAN EFFECT; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SILICON OXIDES; STRAINS; TRANSMISSION