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Title: The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess

Standard Cu-poor Cu(In,Ga)Se{sub 2} solar cell absorbers are usually prepared under high Se excess since the electronic properties of the absorbers are better if prepared under high Se pressure. However, in CuInSe{sub 2}, grown under Cu-excess, it was found that solar cell properties improve with lowering the Se pressure, mostly because of reduced tunnel contribution to the recombination path. Lower Se pressure during Cu-rich growth leads to increased (112) texture of the absorber films, to better optical film quality, as seen by increased excitonic luminescence and to lower net doping levels, which explains the reduced tunnelling effect. These findings show an opposite trend from the one observed in Cu-poor Cu(In,Ga)Se{sub 2}.
Authors:
; ; ; ;  [1]
  1. Laboratory for Photovoltaics, Physics and Materials Science Research Unit, University of Luxembourg, L-4422 Belvaux (Luxembourg)
Publication Date:
OSTI Identifier:
22310654
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; RECOMBINATION; SELENIUM COMPOUNDS; SOLAR CELLS; TUNNEL EFFECT