The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess

Deprédurand, Valérie; Bertram, Tobias; Regesch, David; Henx, Benjamin; Siebentritt, Susanne

doi:10.1063/1.4900839

Title: The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess

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Abstract

Standard Cu-poor Cu(In,Ga)Se{sub 2} solar cell absorbers are usually prepared under high Se excess since the electronic properties of the absorbers are better if prepared under high Se pressure. However, in CuInSe{sub 2}, grown under Cu-excess, it was found that solar cell properties improve with lowering the Se pressure, mostly because of reduced tunnel contribution to the recombination path. Lower Se pressure during Cu-rich growth leads to increased (112) texture of the absorber films, to better optical film quality, as seen by increased excitonic luminescence and to lower net doping levels, which explains the reduced tunnelling effect. These findings show an opposite trend from the one observed in Cu-poor Cu(In,Ga)Se{sub 2}.

Authors:

Deprédurand, Valérie; Bertram, Tobias; Regesch, David; Henx, Benjamin; Siebentritt, Susanne ^[1]

Laboratory for Photovoltaics, Physics and Materials Science Research Unit, University of Luxembourg, L-4422 Belvaux (Luxembourg)

Publication Date:: Mon Oct 27 00:00:00 EDT 2014

OSTI Identifier:: 22310654

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; RECOMBINATION; SELENIUM COMPOUNDS; SOLAR CELLS; TUNNEL EFFECT

Citation Formats


                    Deprédurand, Valérie, Bertram, Tobias, Regesch, David, Henx, Benjamin, and Siebentritt, Susanne. The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4900839.

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                    Deprédurand, Valérie, Bertram, Tobias, Regesch, David, Henx, Benjamin, & Siebentritt, Susanne. The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess.  United States.  https://doi.org/10.1063/1.4900839

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                    Deprédurand, Valérie, Bertram, Tobias, Regesch, David, Henx, Benjamin, and Siebentritt, Susanne. 2014.  
        "The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess".  United States.  https://doi.org/10.1063/1.4900839.

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@article{osti_22310654,

  title        = {The influence of Se pressure on the electronic properties of CuInSe{sub 2} grown under Cu-excess},

  author       = {Deprédurand, Valérie and Bertram, Tobias and Regesch, David and Henx, Benjamin and Siebentritt, Susanne},

  abstractNote = {Standard Cu-poor Cu(In,Ga)Se{sub 2} solar cell absorbers are usually prepared under high Se excess since the electronic properties of the absorbers are better if prepared under high Se pressure. However, in CuInSe{sub 2}, grown under Cu-excess, it was found that solar cell properties improve with lowering the Se pressure, mostly because of reduced tunnel contribution to the recombination path. Lower Se pressure during Cu-rich growth leads to increased (112) texture of the absorber films, to better optical film quality, as seen by increased excitonic luminescence and to lower net doping levels, which explains the reduced tunnelling effect. These findings show an opposite trend from the one observed in Cu-poor Cu(In,Ga)Se{sub 2}.},

  doi          = {10.1063/1.4900839},

  url          = {https://www.osti.gov/biblio/22310654},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 17,

  volume       = 105,

  place        = {United States},

  year         = {Mon Oct 27 00:00:00 EDT 2014},

  month        = {Mon Oct 27 00:00:00 EDT 2014}

}

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