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Title: Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}

Abstract

Transient reflectivity (TR) from thin films (6–40 nm thick) of the topological insulator Bi{sub 2}Se{sub 3} revealed ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ∼20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.

Authors:
; ; ;  [1]
  1. Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
Publication Date:
OSTI Identifier:
22310651
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; CAPTURE; CARRIERS; CRYSTAL DEFECTS; HOLES; PETROLEUM RESIDUES; PHOTOLUMINESCENCE; RECOMBINATION; REFLECTIVITY; SIMULATION; SURFACES; THIN FILMS; TIME RESOLUTION; TRANSIENTS

Citation Formats

Glinka, Yuri D., E-mail: ydglinka@mail.wvu.edu, Institute of Physics, National Academy of Sciences of Ukraine, Kiev 03028, Babakiray, Sercan, Johnson, Trent A., Holcomb, Mikel B., and Lederman, David. Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}. United States: N. p., 2014. Web. doi:10.1063/1.4901052.
Glinka, Yuri D., E-mail: ydglinka@mail.wvu.edu, Institute of Physics, National Academy of Sciences of Ukraine, Kiev 03028, Babakiray, Sercan, Johnson, Trent A., Holcomb, Mikel B., & Lederman, David. Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}. United States. https://doi.org/10.1063/1.4901052
Glinka, Yuri D., E-mail: ydglinka@mail.wvu.edu, Institute of Physics, National Academy of Sciences of Ukraine, Kiev 03028, Babakiray, Sercan, Johnson, Trent A., Holcomb, Mikel B., and Lederman, David. 2014. "Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}". United States. https://doi.org/10.1063/1.4901052.
@article{osti_22310651,
title = {Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}},
author = {Glinka, Yuri D., E-mail: ydglinka@mail.wvu.edu and Institute of Physics, National Academy of Sciences of Ukraine, Kiev 03028 and Babakiray, Sercan and Johnson, Trent A. and Holcomb, Mikel B. and Lederman, David},
abstractNote = {Transient reflectivity (TR) from thin films (6–40 nm thick) of the topological insulator Bi{sub 2}Se{sub 3} revealed ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ∼20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.},
doi = {10.1063/1.4901052},
url = {https://www.osti.gov/biblio/22310651}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 105,
place = {United States},
year = {Mon Oct 27 00:00:00 EDT 2014},
month = {Mon Oct 27 00:00:00 EDT 2014}
}