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Title: Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}

Transient reflectivity (TR) from thin films (6–40 nm thick) of the topological insulator Bi{sub 2}Se{sub 3} revealed ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ∼20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.
Authors:
 [1] ;  [2] ; ; ; ;  [1]
  1. Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
  2. (Ukraine)
Publication Date:
OSTI Identifier:
22310651
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; CAPTURE; CARRIERS; CRYSTAL DEFECTS; HOLES; PETROLEUM RESIDUES; PHOTOLUMINESCENCE; RECOMBINATION; REFLECTIVITY; SIMULATION; SURFACES; THIN FILMS; TIME RESOLUTION; TRANSIENTS