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Title: Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces

Triple steps on Si(111) surfaces are popular building blocks for bottom-up nanostructure assembly, conferring size uniformity and precise positioning of growing nanostructures. In this work, we employ the Si(7 7 10) regular stepped surface as model system to study the triple steps by scanning tunneling microscopy (STM) and large-scale first-principles calculations. We find a surprising cohabitation of reconstruction elements at the step edge that either buckles statically or dynamically at room temperature. The driving force for the observed sequence of buckling patterns is traced back to Coulomb interactions involving charged adatoms and rest-atoms lying on a mini-terrace. These results reconcile the Si(111) triple step model with the experimental STM data.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Institute of Semiconductor Physics, pr. Lavrentyeva 13, Novosibirsk 630090 (Russian Federation)
  2. Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal)
  3. Department of Chemistry, University of Surrey, Guildford GU2 7XH (United Kingdom)
  4. School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)
Publication Date:
OSTI Identifier:
22310648
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; COULOMB FIELD; INTERACTIONS; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACES; TEMPERATURE RANGE 0273-0400 K