Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes
- Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)
- School of Engineering, University of Glasgow, James Watt South Building, Glasgow G12 8LT (United Kingdom)
Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.
- OSTI ID:
- 22310641
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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