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Title: Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)
  2. School of Engineering, University of Glasgow, James Watt South Building, Glasgow G12 8LT (United Kingdom)
Publication Date:
OSTI Identifier:
22310641
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AUGER EFFECT; CARRIERS; EFFICIENCY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INJECTION; LIFETIME; LIGHT EMITTING DIODES; MODULATION; NITROGEN COMPOUNDS; PHASE SPACE; QUANTUM WELLS; RECOMBINATION; TEMPERATURE DEPENDENCE