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Title: Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
Authors:
 [1] ;  [1] ;  [2]
  1. Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)
  2. (China)
Publication Date:
OSTI Identifier:
22310639
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GALLIUM ARSENIDES; HOLES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; PHOTONS; PROBABILITY; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; TUNNEL DIODES; TUNNEL EFFECT; VISIBLE RADIATION; X-RAY SPECTROSCOPY