Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

Journal Article · Mon Oct 27 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898342· OSTI ID:22310639

Wu, Cheng-Han ^[1]; Wu, Chao-Hsin ^[1]

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1. Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

• OSTI ID: 22310639
• Journal Information: Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
GALLIUM ARSENIDES
HOLES
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
PHOTONS
PROBABILITY
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
TUNNEL DIODES
TUNNEL EFFECT
VISIBLE RADIATION
X-RAY SPECTROSCOPY