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Title: Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1]
  1. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany)
  2. (Germany)
  3. Calisolar GmbH, Magnusstraße 11, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22308982
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON ADDITIONS; CAPTURE; CHARGE CARRIERS; CHARGE STATES; DISSOCIATION; DOPED MATERIALS; EMISSION; ILLUMINANCE; IRON ADDITIONS; IRON BORIDES; LIFETIME; PHOSPHORUS ADDITIONS; SILICON; TRAPS