Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4890460· OSTI ID:22308912

Wang, Zilan; Su, Shichen; Anwand, W.; Wagner, A. ^[1]

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1. Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

• OSTI ID: 22308912
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
CRYSTAL DEFECTS
DIFFUSION
ELECTRICAL PROPERTIES
ENERGY BEAM DEPOSITION
FILMS
INTERFACES
ION MICROPROBE ANALYSIS
LASER RADIATION
MASS SPECTROSCOPY
MICROSTRUCTURE
POSITRONS
PULSED IRRADIATION
RAMAN SPECTROSCOPY
SAPPHIRE
TEMPERATURE RANGE 0273-0400 K
VACANCIES
ZINC OXIDES