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Title: On the doping limit for strain stability retention in phosphorus doped Si:C

Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 × 10{sup 14} atom/cm{sup 2}) for the retention of strain stability in phosphorus doped Si:C.
Authors:
; ;  [1]
  1. Department of Physics, National Central University, Jungli 32054, Taiwan (China)
Publication Date:
OSTI Identifier:
22308910
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARBON; CARBON COMPOUNDS; DOPED MATERIALS; FOURIER TRANSFORM SPECTROMETERS; GETTERING; HALL EFFECT; ION IMPLANTATION; PHOSPHORUS ADDITIONS; PRECIPITATION; RELAXATION; RESOLUTION; SILICON; SILICON CARBIDES; SILICON COMPOUNDS; STABILITY; STRAINS; X-RAY DIFFRACTION