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Title: Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Department of Microelectronics, National Research University of Electronic Technology (MIET), Zelenograd (Russian Federation)
  2. al-Farabi Kazakh National University, Almaty (Kazakhstan)
  3. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22308886
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1624; Journal Issue: 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ARSENIC SULFIDES; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRONS; FILMS; PLASMA; SELENIDES; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRAPS; VACUUM EVAPORATION