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Title: An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis

The crystal structure of thin films grown by atomic layer deposition (ALD) will determine important performance properties such as conductivity, breakdown voltage, and catalytic activity. We report the design of an atomic layer deposition chamber for in situ x-ray analysis that can be used to monitor changes to the crystal structural during ALD. The application of the chamber is demonstrated for Pt ALD on amorphous SiO{sub 2} and SrTiO{sub 3} (001) using synchrotron-based high resolution x-ray diffraction, grazing incidence x-ray diffraction, and grazing incidence small angle scattering.
Authors:
; ; ;  [1] ;  [2] ; ;  [3]
  1. Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
  3. SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)
Publication Date:
OSTI Identifier:
22308856
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 85; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; INCIDENCE ANGLE; RESOLUTION; SILICON OXIDES; SMALL ANGLE SCATTERING; STRONTIUM TITANATES; THIN FILMS; X-RAY DIFFRACTION