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Title: A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures

Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.
Authors:
; ;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)
  2. School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)
  3. National Institute of Standards and Technology, Gaithesburg, Maryland 20899 (United States)
  4. U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
Publication Date:
OSTI Identifier:
22308734
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ARSENIC COMPOUNDS; CAPACITANCE; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FERMI LEVEL; GALLIUM COMPOUNDS; HARD X RADIATION; INDIUM COMPOUNDS; INTERFACES; METALS; PHOTOELECTRON SPECTROSCOPY; WORK FUNCTIONS