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Title: Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

We report an experimental study on the optical properties of the self-organized 1.55-μm InAs/InGaAsP/InP quantum dots (QDs) under hydrostatic pressure up to 9.5 GPa at 10 K. The obtained pressure coefficients of emissions from InGaAsP to InAs QDs are 92 meV/GPa and 76 meV/GPa, respectively. Their photoluminescence intensities are found to decrease significantly with increasing pressure due to the pressure-induced Γ-X mixing of InGaAsP at about 8.5 GPa. The lifetime of excitonic emission from QDs decreases from about 1.15 at zero pressure to about 1.05 ns at 7.41 GPa. The wavelength of QD emission was tuned from 1.55 to 0.9 μm by applying a pressure of 8 GPa, displaying the feasibility for indirectly characterizing the individual InAs/InGaAsP/InP QDs of 1.55-μm emission (at zero pressure) under high-pressure using silicon avalanche photodiode.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
  2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22308719
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; INDIUM ARSENIDES; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LIFETIME; OPTICAL PROPERTIES; PHOSPHORUS COMPOUNDS; PHOTODIODES; PHOTOLUMINESCENCE; PRESSURE COEFFICIENT; PRESSURE RANGE GIGA PA; QUANTUM DOTS; SILICON; WAVELENGTHS