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Title: Point defects and p-type conductivity in Zn{sub 1–x}Mn{sub x}GeAs{sub 2}

Positron annihilation spectroscopy is used to study point defects in Zn{sub 1–x}Mn{sub x}GeAs{sub 2} crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 10{sup 19}≤p≤10{sup 21}cm{sup −3} in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 10{sup 16}−10{sup 18}cm{sup −3}, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn{sub 1–x}Mn{sub x}GeAs{sub 2} crystals.
Authors:
 [1] ;  [2] ; ;  [1] ; ; ;  [3] ; ;  [4]
  1. Department of Applied Physics, Aalto University, P.O.Box 11100, FI-00076 Aalto Espoo (Finland)
  2. (Poland)
  3. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  4. Kurnakov Institute of General and Inorganic Chemistry RAS, 119991 Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22308713
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; ANNIHILATION; ARSENIC COMPOUNDS; CARRIERS; CHALCOPYRITE; CONCENTRATION RATIO; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; GERMANIUM COMPOUNDS; MANGANESE COMPOUNDS; POINT DEFECTS; POSITRONS; P-TYPE CONDUCTORS; QUATERNARY ALLOY SYSTEMS; SPECTROSCOPY; VACANCIES; ZINC COMPOUNDS; ZINC SULFIDES