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Title: Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect

A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14 μrad under an applied electric field of about 350 V/mm. This effect should offer an alternative detection method for spintronics.
Authors:
 [1] ;  [2] ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22308709
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; COUPLING; CRYSTALS; CURRENTS; DETECTION; ELECTRIC FIELDS; ELECTRO-OPTICAL EFFECTS; GALLIUM ARSENIDES; NONLINEAR PROBLEMS; POLARIZATION; SPIN