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Title: Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.
Authors:
; ; ;  [1] ;  [2]
  1. Japan Advanced Institute of Science and Technology (JAIST) 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
  2. (JST) 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
Publication Date:
OSTI Identifier:
22308567
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CATALYTIC CRACKING; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; EFFICIENCY; FILMS; LAYERS; MOLECULES; N-TYPE CONDUCTORS; PASSIVATION; PHOSPHORUS HYDRIDES; RECOMBINATION; SILICON; SILICON NITRIDES; SOLAR CELLS; SURFACES