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Title: Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. School of Physics, Shandong University, Jinan 250100 (China)
  2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
  3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  4. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22308564
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CARRIER MOBILITY; CHARGE DENSITY; COULOMB FIELD; ELECTRON DRIFT; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INTERFACES; MATTHIESSEN RULE; NITROGEN COMPOUNDS; PHONONS; PIEZOELECTRICITY; POLARIZATION; ROUGHNESS; SCATTERING; SIMULATION; STRAINS